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| Specification Comparison Vishay Siliconix SI7868ADP vs. Si7868DP Description: Package: Pin Out: N-Channel, 20-V (D-S) MOSFET PowerPAK(R) SO-8 Identical Part Number Replacements: SI7868ADP-T1-E3 Replaces Si7868DP-T1-E3 SI7868ADP-T1-E3 Replaces Si7868DP-T1 Summary of Performance: The SI7868ADP is the replacement to the original Si7868DP; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol SI7868ADP Si7868DP Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Avalanche Current Power Dissipation TA = 25C TA = 70C VDS VGS ID IDM IS L = 0.1 mH TA = 25C IAS PD Tj & Tstg RthJA 20 +16 35 28 70 4.9 30 5.4 3.4 -55 to 150 23 20 +16 29 25 60 4.5 50 5.4 3.4 -55 to 150 23 W C C/W A V TA = 70C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 30 0.0018 0.0021 150 0.65 46 9.5 8.8 1.1 28 120 52 12 50 1.1 70 0.00225 0.00275 0.6 1.6 +100 1 30 0.0018 0.0022 95 0.63 50 12 11 1.2 53 49 150 75 65 1.1 75 nC 1.8 80 75 240 110 100 ns 0.00225 0.00275 0.6 1.5 +100 1 V nA A A S V Symbol Min SI7868ADP Typ Max Min Si7868DP Typ Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 0.5 1.7 45 180 80 20 75 0.5 Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time * Datasheet test conditions differ; RL = 1 , ID = 10 A, Rg = 1 on the SI7868ADP and RL = 10 , ID = 1 A, Rg = 6 on the Si7868DP. Document Number 74054 15-Apr-05 www.vishay.com |
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